The FQP11N50CF is a high-power N-channel MOSFET from Onsemi, featuring a maximum operating temperature range of -55°C to 150°C. It has a drain to source breakdown voltage of 500V and a continuous drain current of 11A. The device is packaged in a TO-220-3 package and is suitable for through-hole mounting. The MOSFET has a maximum power dissipation of 195W and a gate to source voltage of 30V.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power195W
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Technical Specifications
Onsemi FQP11N50CF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.055nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 195W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 195W |
| Rds On Max | 550mR |
| RoHS Compliant | No |
| Series | FRFET® |
| Turn-Off Delay Time | 120ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP11N50CF Datasheet
Download the complete datasheet for Onsemi FQP11N50CF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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