P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 11.4A. This single-element transistor offers a low on-resistance of 175mΩ and a maximum power dissipation of 53W. Encased in a TO-220 package for through-hole mounting, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 45ns fall time, 15ns turn-off delay, and 6.5ns turn-on delay.
PackageTO-220-3
Current Rating-11.4A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP11P06 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11.4A |
| Current Rating | -11.4A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 175mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.38mm |
| Input Capacitance | 550pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 53W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 53W |
| Radiation Hardening | No |
| Rds On Max | 175mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.5ns |
| DC Rated Voltage | -60V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP11P06 Datasheet
Download the complete datasheet for Onsemi FQP11P06 to view detailed technical specifications.
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