The FQP12N60 is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 10.5A and a maximum power dissipation of 180W. The device is RoHS compliant and lead free, and is packaged in a rail/tube format with 50 units per package. It has an input capacitance of 1.9nF and a gate to source voltage of 30V.
PackageTO-220-3
Current Rating10.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP12N60 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10.5A |
| Current Rating | 10.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 700mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 95ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP12N60 Datasheet
Download the complete datasheet for Onsemi FQP12N60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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