P-channel Power MOSFET featuring a -100V drain-to-source breakdown voltage and a continuous drain current of 11.5A. This single-element transistor offers a low on-resistance of 290mΩ at a 10V gate-source voltage. Packaged in a TO-220 through-hole mount, it supports a maximum power dissipation of 75W and operates within a temperature range of -55°C to 175°C. Ideal for power switching applications, it boasts fast switching characteristics with turn-on delay times of 15ns and fall times of 60ns.
PackageTO-220
Current Rating-11.5A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP12P10 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 11.5A |
| Current Rating | -11.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -100V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP12P10 Datasheet
Download the complete datasheet for Onsemi FQP12P10 to view detailed technical specifications.
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