N-channel Power MOSFET, logic-level gate drive, featuring 100V drain-source breakdown voltage and 12.8A continuous drain current. Offers a low 180mΩ maximum drain-source on-resistance. Packaged in a TO-220AB through-hole mount, this single-element MOSFET operates from -55°C to 175°C with a 65W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 7.5ns and fall time of 72ns.
PackageTO-220AB
Current Rating12.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP13N10L technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 12.8A |
| Current Rating | 12.8A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 180mR |
| Element Configuration | Single |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 65W |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 7.5ns |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP13N10L Datasheet
Download the complete datasheet for Onsemi FQP13N10L to view detailed technical specifications.
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