N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 12.5A continuous drain current. This single-element transistor offers a low 430mΩ drain-source on-resistance at a nominal 5V gate-source voltage. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 170W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free, this MOSFET is suitable for various power switching applications.
PackageTO-220
Current Rating12.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP13N50 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 12.5A |
| Current Rating | 12.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 430mR |
| Dual Supply Voltage | 500V |
| Element Configuration | Single |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Rds On Max | 430mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 500V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP13N50 Datasheet
Download the complete datasheet for Onsemi FQP13N50 to view detailed technical specifications.
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