ONSEMI

FQP13N50C

Datasheet

Onsemi

FQP13N50C

Name: FQP13N50C Onsemi
Brand: Onsemi
SKU: FQP13N50C

500V 13A N-CH MOSFET TO-220

N-channel MOSFET with 500V drain-source breakdown voltage and 13A continuous drain current. Features low 480mΩ drain-source on-resistance and 195W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-220 through-hole mount with typical turn-on delay of 25ns and fall time of 100ns. RoHS compliant.

PackageTO-220

Current Rating13A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQP13N50C technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	13A
Current Rating	13A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	480mR
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	480mR
Dual Supply Voltage	500V
Fall Time	100ns
Gate to Source Voltage (Vgs)	30V
Height	9.4mm
Input Capacitance	2.055nF
Lead Free	Lead Free
Length	10.1mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	195W
Mount	Through Hole
Nominal Vgs	4V
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	195W
Rds On Max	480mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET™
Termination	Through Hole
Turn-Off Delay Time	130ns
Turn-On Delay Time	25ns
DC Rated Voltage	500V
Width	4.7mm