
N-channel Power MOSFET featuring a 300V drain-source breakdown voltage and a continuous drain current of 14.4A. This through-hole component offers a low on-resistance of 290mΩ and a maximum power dissipation of 147W. Packaged in a TO-220AB case, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Ideal for power switching applications, it boasts fast switching speeds with turn-on delay time of 22ns and fall time of 70ns.
Onsemi FQP14N30 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 14.4A |
| Current Rating | 14.4A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 300V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.36nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 147W |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 300V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQP14N30 to view detailed technical specifications.
No datasheet is available for this part.
