N-channel MOSFET with 100V drain-source breakdown voltage and 19A continuous drain current. Features low 100mΩ drain-source on-resistance and 75W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220-3 through-hole mount with a 780pF input capacitance. RoHS compliant and lead-free.
PackageTO-220-3
Voltage100V
Current17A
Current Rating19A
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Technical Specifications
Onsemi FQP19N10 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 19A |
| Current | 17A |
| Current Rating | 19A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP19N10 Datasheet
Download the complete datasheet for Onsemi FQP19N10 to view detailed technical specifications.
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