N-Channel Power MOSFET, QFET® series, featuring a 200V drain-source breakdown voltage and 19.4A continuous drain current. This single-element transistor offers a low 150mΩ drain-source on-resistance and 140W power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a -55°C to 150°C temperature range and is RoHS compliant.
PackageTO-220
Current Rating19.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP19N20 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 19.4A |
| Current Rating | 19.4A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 150mR |
| Dual Supply Voltage | 200V |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.38mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| On-State Resistance | 120mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 140ns |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 200V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP19N20 Datasheet
Download the complete datasheet for Onsemi FQP19N20 to view detailed technical specifications.
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