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Technical Specifications
Onsemi FQP19N20C_F080 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.08nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Rds On Max | 170mR |
| Series | QFET™ |
| Turn-Off Delay Time | 135ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP19N20C_F080 Datasheet
Download the complete datasheet for Onsemi FQP19N20C_F080 to view detailed technical specifications.
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