N-channel Power MOSFET featuring 300V drain-source breakdown voltage and 21A continuous drain current. This QFET® series component offers a low 160mΩ drain-source on-resistance and 170W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay of 35ns and turn-off delay of 85ns.
PackageTO-220
Current Rating21A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP22N30 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 160MR |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 300V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP22N30 Datasheet
Download the complete datasheet for Onsemi FQP22N30 to view detailed technical specifications.
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