P-channel Power MOSFET, QFET® series, featuring a -60V drain-source breakdown voltage and a continuous drain current of 27A. This single-element transistor offers a low 70mΩ drain-source on-resistance and a maximum power dissipation of 120W. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 175°C and includes fast switching times with turn-on delay of 18ns and fall time of 90ns. RoHS compliant and lead-free.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 27A |
| Current Rating | -27A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 70mR |
| Dual Supply Voltage | -60V |
| Element Configuration | Single |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | -60V |
| Weight | 1.8g |
| Width | 9.9mm |
| RoHS | Compliant |
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