P-channel Power MOSFET, QFET® series, featuring a -60V drain-source breakdown voltage and a continuous drain current of 27A. This single-element transistor offers a low 70mΩ drain-source on-resistance and a maximum power dissipation of 120W. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 175°C and includes fast switching times with turn-on delay of 18ns and fall time of 90ns. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating-27A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP27P06 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
27A
Current Rating
-27A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
70mR
Dual Supply Voltage
-60V
Element Configuration
Single
Fall Time
90ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.4nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
120W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
120W
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
-4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
18ns
DC Rated Voltage
-60V
Weight
1.8g
Width
9.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQP27P06 Datasheet
Download the complete datasheet for Onsemi FQP27P06 to view detailed technical specifications.
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