The FQP2N50 is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 2.1A. It features a TO-220-3 package and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 55W. The FQP2N50 is RoHS compliant and lead free.
PackageTO-220-3
Current Rating2.1A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQP2N50 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.1A |
| Current Rating | 2.1A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 5.3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 5.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP2N50 Datasheet
Download the complete datasheet for Onsemi FQP2N50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
