FQP33N10

N-Channel Power MOSFET, QFET® series, featuring a 100V drain-source breakdown voltage and a continuous drain current of 33A. This through-hole component offers a low drain-source on-resistance of 52mΩ at a nominal gate-source voltage of 4V. Designed for high-power applications, it boasts a maximum power dissipation of 127W and operates across a wide temperature range from -55°C to 175°C. The TO-220AB package ensures robust thermal performance, with fast switching characteristics including a 15ns turn-on delay and 80ns turn-off delay.