N-Channel Power MOSFET, QFET® series, featuring a 100V drain-source breakdown voltage and a continuous drain current of 33A. This through-hole component offers a low drain-source on-resistance of 52mΩ at a nominal gate-source voltage of 4V. Designed for high-power applications, it boasts a maximum power dissipation of 127W and operates across a wide temperature range from -55°C to 175°C. The TO-220AB package ensures robust thermal performance, with fast switching characteristics including a 15ns turn-on delay and 80ns turn-off delay.
PackageTO-220AB
Current Rating33A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP33N10 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
33A
Current Rating
33A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
52mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
52mR
Dual Supply Voltage
100V
Element Configuration
Single
Fall Time
110ns
Gate to Source Voltage (Vgs)
25V
Height
9.4mm
Input Capacitance
1.5nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
127W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
127W
Radiation Hardening
No
Rds On Max
52mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
4V
Turn-Off Delay Time
80ns
Turn-On Delay Time
15ns
DC Rated Voltage
100V
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQP33N10 Datasheet
Download the complete datasheet for Onsemi FQP33N10 to view detailed technical specifications.
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