The FQP33N10L is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 33A and a drain to source breakdown voltage of 100V. The device is lead free and RoHS compliant, with a maximum power dissipation of 127W.
PackageTO-220-3
Current Rating33A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP33N10L technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 127W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 127W |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP33N10L Datasheet
Download the complete datasheet for Onsemi FQP33N10L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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