The FQP3N50C is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 3A. It has a power dissipation of 62W and is packaged in a TO-220AB flange mount. The device is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power62W
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Technical Specifications
Onsemi FQP3N50C technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.5R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 62W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP3N50C Datasheet
Download the complete datasheet for Onsemi FQP3N50C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.