N-channel MOSFET with 600V drain-source breakdown voltage and 3A continuous drain current. Features low 3.6 Ohm Rds On, 75W power dissipation, and TO-220AB through-hole package. Operates from -55°C to 150°C with fast switching times including 12ns turn-on delay and 30ns fall time. Input capacitance is 450pF, with a maximum gate-source voltage of 30V. This RoHS compliant component is supplied in rail/tube packaging.
PackageTO-220AB
Current Rating3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP3N60 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 3.6R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP3N60 Datasheet
Download the complete datasheet for Onsemi FQP3N60 to view detailed technical specifications.
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