N-Channel Power MOSFET, QFET® series, featuring 600V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 3.4 Ohms and a power dissipation of 75W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-220-3 configuration. Key switching characteristics include a 12ns turn-on delay and a 35ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power75W
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Technical Specifications
Onsemi FQP3N60C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.4R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 3.4R |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 565pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 3.4R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP3N60C Datasheet
Download the complete datasheet for Onsemi FQP3N60C to view detailed technical specifications.
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