P-channel Power MOSFET featuring a -200V drain-source breakdown voltage and a continuous drain current of 2.8A. This TO-220 packaged MOSFET offers a low drain-source on-resistance of 2.7Ω, with fast switching characteristics including a 8.5ns turn-on delay and 25ns fall time. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 52W.
PackageTO-220
Voltage200V
Current28A
Current Rating-2.8A
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Technical Specifications
Onsemi FQP3P20 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 2.8A |
| Current | 28A |
| Current Rating | -2.8A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 2.7R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.3mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -5V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.5ns |
| Voltage | 200V |
| DC Rated Voltage | -200V |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP3P20 Datasheet
Download the complete datasheet for Onsemi FQP3P20 to view detailed technical specifications.
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