P-channel Power MOSFET featuring a -500V drain-source breakdown voltage and a continuous drain current of 2.7A. This single-element transistor offers a low drain-source on-resistance of 4.9Ω at a nominal Vgs of -5V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 85W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 12ns and a fall time of 45ns.
PackageTO-220AB
Current Rating-2.7A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP3P50 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | -2.7A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 4.9R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 4.9R |
| Dual Supply Voltage | -500V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Nominal Vgs | -5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 85W |
| Radiation Hardening | No |
| Rds On Max | 4.9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -500V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP3P50 Datasheet
Download the complete datasheet for Onsemi FQP3P50 to view detailed technical specifications.
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