N-Channel Power MOSFET, QFET™ series, featuring 100V drain-source breakdown voltage and 43.5A continuous drain current. This single-element transistor boasts a low 39mΩ drain-source on-resistance and 146W maximum power dissipation. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 175°C and offers fast switching with typical turn-on delay of 19ns and turn-off delay of 90ns. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating43.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP44N10 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 43.5A |
| Current Rating | 43.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.4mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 146W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 146W |
| Rds On Max | 39mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP44N10 Datasheet
Download the complete datasheet for Onsemi FQP44N10 to view detailed technical specifications.
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