N-Channel Power MOSFET, logic-level, QFET® series, featuring 200V drain-source breakdown voltage and 3.8A continuous drain current. This single-element transistor offers a low 1.35Ω drain-source on-resistance and 45W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 7ns turn-on delay and 40ns fall time.
PackageTO-220AB
Current Rating3.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP4N20L technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | 3.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.35R |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 1.35R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 200V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP4N20L Datasheet
Download the complete datasheet for Onsemi FQP4N20L to view detailed technical specifications.
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