N-channel MOSFET with 600V drain-source breakdown voltage and 4.4A continuous drain current. Features low on-resistance of 2.2 Ohms and a TO-220 package for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 106W. Includes fast switching characteristics with a fall time of 35ns and turn-off delay of 25ns.
PackageTO-220-3
Voltage600V
Current44A
Current Rating4.4A
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Technical Specifications
Onsemi FQP4N60 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.4A |
| Current | 44A |
| Current Rating | 4.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 106W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 106W |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 25ns |
| Voltage | 600V |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP4N60 Datasheet
Download the complete datasheet for Onsemi FQP4N60 to view detailed technical specifications.
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