N-channel MOSFET with 800V drain-source breakdown voltage and 4.8A continuous drain current. Features 2.6 Ohm Rds On Max at 5V gate-source voltage, 140W power dissipation, and TO-220AB through-hole package. Includes 1.25nF input capacitance, 40ns fall time, 55ns turn-off delay, and 22ns turn-on delay. Operates from -55°C to 150°C, is RoHS compliant, and lead-free.
PackageTO-220AB
Voltage800V
Current48A
Current Rating4.5A
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Technical Specifications
Onsemi FQP5N80 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 4.8A |
| Current | 48A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.6R |
| Drain to Source Voltage (Vdss) | 800V |
| Dual Supply Voltage | 800V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.25nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 2.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 22ns |
| Voltage | 800V |
| DC Rated Voltage | 800V |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP5N80 Datasheet
Download the complete datasheet for Onsemi FQP5N80 to view detailed technical specifications.
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