N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 65A continuous drain current. This single-element transistor offers a low 16mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 150W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C and boasts fast switching characteristics with a turn-on delay of 20ns and fall time of 105ns. RoHS compliant and lead-free.
PackageTO-220
Current Rating65A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP65N06 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 65A |
| Current Rating | 65A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.4mm |
| Input Capacitance | 2.41nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP65N06 Datasheet
Download the complete datasheet for Onsemi FQP65N06 to view detailed technical specifications.
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