
N-Channel Power MOSFET with 400V drain-source breakdown voltage and 6A continuous drain current. Features 1.0Ω drain-source on-resistance and 73W maximum power dissipation. Packaged in a TO-220AB through-hole mount with a 38ns fall time. Operates from -55°C to 150°C and is RoHS compliant.
Onsemi FQP6N40C technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 1R |
| Element Configuration | Single |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 73W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 73W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQP6N40C to view detailed technical specifications.
No datasheet is available for this part.
