N-Channel MOSFET featuring 700V drain-source breakdown voltage and 6.2A continuous drain current. This TO-220-3 packaged component offers a low 1.5 Ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 142W. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay of 25ns and fall time of 50ns. This RoHS compliant, lead-free component is supplied in a rail/tube package.
Onsemi FQP6N70 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 142W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 142W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 700V |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQP6N70 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
