N-channel power MOSFET featuring 800V drain-source breakdown voltage and 5.8A continuous drain current. This single-element transistor offers a low 1.95 Ohm drain-source on-resistance and 158W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 45ns fall time and 65ns turn-off delay time, with a nominal gate-source voltage of 5V.
PackageTO-220AB
Current Rating5.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP6N80 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.8A |
| Current Rating | 5.8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.95R |
| Drain to Source Voltage (Vdss) | 800V |
| Dual Supply Voltage | 800V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 158W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 158W |
| Rds On Max | 1.95R |
| Reach SVHC Compliant | No |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 800V |
| Weight | 1.8g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP6N80 Datasheet
Download the complete datasheet for Onsemi FQP6N80 to view detailed technical specifications.
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