
The FQP6P25 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 6A and a drain to source breakdown voltage of -250V. The device features a drain to source resistance of 1.1R and a fall time of 50ns. It is packaged in a TO-220-3 package and is lead free and RoHS compliant.
Onsemi FQP6P25 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | -6A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 90W |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | -250V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQP6P25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
