N-channel MOSFET, 400V drain-source breakdown voltage, 7A continuous drain current, and 800mΩ drain-source resistance. Features TO-220-3 through-hole package, 98W maximum power dissipation, and 150°C maximum operating temperature. Includes 5V nominal gate-source voltage, 780pF input capacitance, 50ns fall time, and 35ns turn-off delay time. RoHS compliant and lead-free.
Onsemi FQP7N40 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 400V |
| Dual Supply Voltage | 400V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 98W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 98W |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | 400V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQP7N40 to view detailed technical specifications.
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