N-channel MOSFET with 650V drain-source breakdown voltage and 7A continuous drain current. Features 1.4 Ohm Rds On, 160W power dissipation, and TO-220-3 through-hole package. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 55ns. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP7N65C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.95mm |
| Input Capacitance | 1.245nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP7N65C Datasheet
Download the complete datasheet for Onsemi FQP7N65C to view detailed technical specifications.
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