N-channel MOSFET, 800V drain-source breakdown voltage, 6.6A continuous drain current, and 1.5Ω Rds On. Features TO-220-3 through-hole mounting package, 167W power dissipation, and a maximum operating temperature of 150°C. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 55ns. Lead-free and RoHS compliant.
PackageTO-220-3
Current Rating6.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP7N80 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.4mm |
| Input Capacitance | 1.85nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 167W |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP7N80 Datasheet
Download the complete datasheet for Onsemi FQP7N80 to view detailed technical specifications.
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