N-Channel Power MOSFET, QFET® series, featuring a 300V drain-to-source breakdown voltage and a continuous drain current of 9A. This through-hole component in a TO-220 package offers a low on-resistance of 450mΩ and a maximum power dissipation of 98W. Key electrical characteristics include a 30V gate-to-source voltage, 750pF input capacitance, and switching times of 16ns turn-on delay, 27ns turn-off delay, and 48ns fall time. Operating across a temperature range of -55°C to 150°C, this RoHS compliant and lead-free MOSFET is supplied in a 1000-piece tube.
PackageTO-220
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP9N30 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 300V |
| Element Configuration | Single |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 98W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 98W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 300V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP9N30 Datasheet
Download the complete datasheet for Onsemi FQP9N30 to view detailed technical specifications.
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