N-channel MOSFET featuring 500V drain-source breakdown voltage and 9A continuous drain current. This through-hole component offers a maximum on-resistance of 730mΩ and a maximum power dissipation of 147W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 package. Key switching characteristics include a fall time of 60ns and a turn-off delay time of 55ns.
PackageTO-220-3
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP9N50 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 730mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 730mR |
| Dual Supply Voltage | 500V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 147W |
| Rds On Max | 730mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP9N50 Datasheet
Download the complete datasheet for Onsemi FQP9N50 to view detailed technical specifications.
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