The FQPF10N20 is a N-CHANNEL MOSFET from Onsemi with a Drain to Source Breakdown Voltage of 200V and a Continuous Drain Current (ID) of 6.8A. It is packaged in a TO-220-3 package and is designed for Through Hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 40W. It is also RoHS compliant.
PackageTO-220-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF10N20 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.8A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 26ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF10N20 Datasheet
Download the complete datasheet for Onsemi FQPF10N20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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