N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 10A continuous drain current. This single-element transistor offers a low 610mΩ drain-source on-resistance and 48W power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 29ns turn-on delay and 80ns fall time.
PackageTO-220-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF10N50CF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 610mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 610mR |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.096nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 610mR |
| RoHS Compliant | Yes |
| Series | FRFET™ |
| Turn-Off Delay Time | 141ns |
| Turn-On Delay Time | 29ns |
| DC Rated Voltage | 500V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF10N50CF Datasheet
Download the complete datasheet for Onsemi FQPF10N50CF to view detailed technical specifications.
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