N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 9.5A Continuous Drain Current, and 730mΩ Drain-to-Source Resistance. This TO-220F packaged MOSFET features a maximum power dissipation of 50W and operates within a temperature range of -55°C to 150°C. It offers a 30V Gate-to-Source Voltage and includes fast switching characteristics with turn-on delay of 23ns and turn-off delay of 144ns. This RoHS compliant component is supplied in a rail/tube package.
PackageTO-220-3
Voltage600V
Current95A
Current Rating9.5A
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Technical Specifications
Onsemi FQPF10N60C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.5A |
| Current | 95A |
| Current Rating | 9.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 730mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 77ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 2.04nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 730mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 144ns |
| Turn-On Delay Time | 23ns |
| Voltage | 600V |
| DC Rated Voltage | 600V |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF10N60C Datasheet
Download the complete datasheet for Onsemi FQPF10N60C to view detailed technical specifications.
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