The FQPF11N40 is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 400V and a continuous drain current of 6.6A. It has a drain to source resistance of 480mR and a power dissipation of 50W. The device operates over a temperature range of -55°C to 150°C and is not RoHS compliant. The FQPF11N40 has a fall time of 60ns and a turn-off delay time of 60ns.
PolarityN-CHANNEL
Power50W
Quick Jump:
Technical Specifications
Onsemi FQPF11N40 technical specifications.
General
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 480mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF11N40 Datasheet
Download the complete datasheet for Onsemi FQPF11N40 to view detailed technical specifications.
No datasheet is available for this part.