N-Channel Power MOSFET featuring FRFET® technology, designed for 500V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 550mΩ drain-to-source resistance (Rds On) and a maximum power dissipation of 48W. It operates within a temperature range of -55°C to 150°C and is packaged in a TO-220-3 configuration. Key switching characteristics include a 24ns turn-on delay and 75ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power48W
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Technical Specifications
Onsemi FQPF11N50CF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 2.055nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Series | FRFET® |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 24ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF11N50CF Datasheet
Download the complete datasheet for Onsemi FQPF11N50CF to view detailed technical specifications.
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