P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 8.6A. This TO-220 package component offers a maximum on-resistance of 175mΩ and a maximum power dissipation of 30W. Operating across a temperature range of -55°C to 175°C, it includes fast switching characteristics with turn-on delay time of 6.5ns and fall time of 45ns. The device is RoHS compliant and lead-free.
PackageTO-220-3
Current Rating-11.4A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF11P06 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.6A |
| Current Rating | -11.4A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 175mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 175MR |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.07mm |
| Input Capacitance | 550pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 175mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.5ns |
| DC Rated Voltage | -60V |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF11P06 Datasheet
Download the complete datasheet for Onsemi FQPF11P06 to view detailed technical specifications.
No datasheet is available for this part.
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