N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 12A continuous drain current. This TO-220-3 packaged component offers a low 650mΩ drain-to-source resistance and 51W maximum power dissipation. Designed for through-hole mounting, it operates within a -55°C to 150°C temperature range and boasts a 4V threshold voltage. RoHS compliant with a 90ns fall time and 155ns turn-off delay.
PackageTO-220-3
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF12N60C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 51W |
| Rds On Max | 650mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 155ns |
| DC Rated Voltage | 600V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF12N60C Datasheet
Download the complete datasheet for Onsemi FQPF12N60C to view detailed technical specifications.
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