N-channel MOSFET with 100V drain-source breakdown voltage and 8.7A continuous drain current. Features 180mΩ maximum drain-source on-resistance and 30W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package. Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 5ns and fall time of 25ns. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating12.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF13N10 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.7A |
| Current Rating | 12.8A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF13N10 Datasheet
Download the complete datasheet for Onsemi FQPF13N10 to view detailed technical specifications.
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