N-channel MOSFET with 500V drain-source breakdown voltage and 12.5A continuous drain current. Features 430mΩ maximum drain-source on-resistance and 56W maximum power dissipation. Operates within a -55°C to 150°C temperature range, with typical turn-on delay of 40ns and fall time of 85ns. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers lead-free construction.
PackageTO-220-3
Current Rating12.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF13N50 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12.5A |
| Current Rating | 12.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 19.5mm |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 56W |
| Rds On Max | 430mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF13N50 Datasheet
Download the complete datasheet for Onsemi FQPF13N50 to view detailed technical specifications.
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