N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 13A Continuous Drain Current, and 480mΩ Max Drain-Source On Resistance. Features a TO-220-3 through-hole package with a maximum power dissipation of 48W. Operates within a temperature range of -55°C to 150°C and offers fast switching speeds with a 25ns turn-on delay and 100ns fall time. RoHS compliant and lead-free.
Onsemi FQPF13N50C technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 480mR |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 2.055nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 500V |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQPF13N50C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.