N-channel Power MOSFET featuring 150V drain-source breakdown voltage and 11.6A continuous drain current. This QFET® series component offers a low 160mΩ drain-source resistance (Rds On Max) and 53W maximum power dissipation. Designed for through-hole mounting in a TO-220F package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include an 11ns turn-on delay and 80ns fall time.
PackageTO-220-3
Current Rating16.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF16N15 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11.6A |
| Current Rating | 16.4A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.19mm |
| Input Capacitance | 910pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 53W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 53W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 150V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF16N15 Datasheet
Download the complete datasheet for Onsemi FQPF16N15 to view detailed technical specifications.
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