The FQPF17N08 is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 30W and a drain to source breakdown voltage of 80V. The device is RoHS compliant and lead free, with a package quantity of 50 units per rail/Tube packaging. It features a gate to source voltage of 25V, an input capacitance of 450pF, and a fall time of 25ns.
PackageTO-220-3
Current Rating16.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF17N08 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11.2A |
| Current Rating | 16.5A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Rds On Max | 115mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF17N08 Datasheet
Download the complete datasheet for Onsemi FQPF17N08 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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