The FQPF17P10 is a P-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 10.5A and a maximum power dissipation of 41W. The device features a drain to source breakdown voltage of -100V and a drain to source resistance of 190mR. It is RoHS compliant and lead free, packaged in a TO-220-3 case with a through hole mount.
PackageTO-220-3
Current Rating-16.5A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF17P10 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10.5A |
| Current Rating | -16.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 41W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF17P10 Datasheet
Download the complete datasheet for Onsemi FQPF17P10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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