The FQPF18N50V2SDTU is a N-CHANNEL MOSFET with a continuous drain current rating of 18A and a drain to source breakdown voltage of 500V. It has a drain to source resistance of 265mR and a power dissipation of 69W. The device is packaged in bulk and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is not RoHS compliant.
Resistance265R
PolarityN-CHANNEL
Power69W
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Technical Specifications
Onsemi FQPF18N50V2SDTU technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 265mR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Resistance | 265R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 95ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF18N50V2SDTU Datasheet
Download the complete datasheet for Onsemi FQPF18N50V2SDTU to view detailed technical specifications.
No datasheet is available for this part.