The FQPF1N60T is a N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 600V and a current rating of 1.2A. The device is packaged in a TO-220-3 package and is lead free. It has an input capacitance of 150pF and a gate to source voltage of 30V. The FQPF1N60T has a maximum power dissipation of 21W and a drain to source resistance of 11.5R.
PackageTO-220-3
Current Rating1.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF1N60T technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 900mA |
| Current Rating | 1.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 11.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 21W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 21W |
| Rds On Max | 11.5R |
| Series | QFET® |
| Turn-Off Delay Time | 7ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF1N60T Datasheet
Download the complete datasheet for Onsemi FQPF1N60T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.